Search results for "SiC device"
showing 5 items of 5 documents
Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter
2021
In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …
A Configuration of 3-phase Traction Inverter Employing {SiC} Devices
2022
In the scenario of a more and more sustainable society, an increasing electrification in different fields, such as mobility and industrial applications, is foreseen in the next decades. As far as power electronics is concerned, a challenging perspective is represented by achieving higher and higher switching frequencies while maintaining high voltage and low power losses. To do that, emerging semiconductor technologies are supposed to be increasingly employed, as well as innovative topologies of connections among switching devices. Among them, the cascode configuration can notably contribute to achieve high levels of dV/dt without losing efficiency. In this paper, a 3-phase Pulse Width Modu…
GaN and SiC Device Characterization by a Dedicated Embedded Measurement System
2023
This work proposes a comparison among GaN and SiC device main parameters measured with a dedicated and low-cost embedded system, employing an STM32 microcontroller designed to the purpose. The system has the advantage to avoid the use of expensive laboratory measurement equipment to test the devices, allowing to obtain their behavior in operating conditions. The following KPIs (Key Performance Indicators) are measured and critically compared: threshold voltage, on-resistance and input capacitance. All the measurements are carried out in a short time interval and on a wide range of switching frequencies, ranging from 10 kHz to 1 MHz. This investigation is focused on the deviation of the figu…
A prototypal PCB board for the EMI characterization of SiC-based innovative switching devices
2020
In this paper, a preliminary PCB board for the electromagnetic interference (EMI) characterization of innovative silicon-carbide (SiC) based switching devices is presented. Packaging technological issues can determine hurdles in the high-frequency switching and high power regime where wide band gap semiconductors are intended today for Electric Vehicle (EV) applications. In particular, the parasitic inductances that emerge in such devices, must be assessed, by using e.g. EMI techniques. In this specific case, the EMI characterization is supposed to be carried out in a semi-anechoic chamber, available at the University of Palermo (UNIPA), to assess the electromagnetic disturbances according …
Simulation of parasitic effects on Silicon Carbide devices for automotive electric traction
2020
Wide Band Gap (WBG) semiconductors are increasingly addressed towards Electric Vehicle (EV) applications, due to their significant advantages in terms of high-voltage and low-losses performances, suitable for high power applications. Nevertheless, the packaging in WBG devices represents a challenge for designers due to the notable impact that inductive and capacitive parasitic components can bring in high switching frequency regime in terms of noise and power losses. In this paper, a comparison between conventional Silicon (Si) and emerging Silicon-Carbide (SiC) power switching devices is presented. The effects of inductive parasitic effects and switching frequency are investigated in simul…